A. KOÇYİĞİT Et Al. , "The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature," Journal of Materials Science: Materials in Electronics , vol.30, no.13, pp.11994-12000, 2019
KOÇYİĞİT, A. Et Al. 2019. The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature. Journal of Materials Science: Materials in Electronics , vol.30, no.13 , 11994-12000.
KOÇYİĞİT, A., Küçükçelebi, H., Sarılmaz, A., Ozel, F., & Yıldırım, M., (2019). The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature. Journal of Materials Science: Materials in Electronics , vol.30, no.13, 11994-12000.
KOÇYİĞİT, ADEM Et Al. "The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature," Journal of Materials Science: Materials in Electronics , vol.30, no.13, 11994-12000, 2019
KOÇYİĞİT, ADEM Et Al. "The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature." Journal of Materials Science: Materials in Electronics , vol.30, no.13, pp.11994-12000, 2019
KOÇYİĞİT, A. Et Al. (2019) . "The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature." Journal of Materials Science: Materials in Electronics , vol.30, no.13, pp.11994-12000.
@article{article, author={ADEM KOÇYİĞİT Et Al. }, title={The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature}, journal={Journal of Materials Science: Materials in Electronics}, year=2019, pages={11994-12000} }