ERDOĞAN, E. Et Al. 2019. p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect. MATERIALS TODAY : PROCEEDINGS , vol.18 , 1868-1874.

ERDOĞAN, E., kundakçı, m., KASAPOĞLU, A. E., & GÜR, E., (2019). p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect. MATERIALS TODAY : PROCEEDINGS , vol.18, 1868-1874.

ERDOĞAN, ERMAN Et Al. "p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect," MATERIALS TODAY : PROCEEDINGS , vol.18, 1868-1874, 2019

ERDOĞAN, ERMAN Et Al. "p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect." MATERIALS TODAY : PROCEEDINGS , vol.18, pp.1868-1874, 2019

ERDOĞAN, E. Et Al. (2019) . "p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect." MATERIALS TODAY : PROCEEDINGS , vol.18, pp.1868-1874.

@article{article, author={ERMAN ERDOĞAN Et Al. }, title={p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect}, journal={MATERIALS TODAY : PROCEEDINGS}, year=2019, pages={1868-1874} }