Erdal, M. Et Al. 2020. The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage. Microelectronics Reliability , vol.106 .

Erdal, M., KOÇYİĞİT, A., & Yıldırım, M., (2020). The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage. Microelectronics Reliability , vol.106.

Erdal, M.O., ADEM KOÇYİĞİT, And M. Yıldırım. "The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage," Microelectronics Reliability , vol.106, 2020

Erdal, M.O. Et Al. "The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage." Microelectronics Reliability , vol.106, 2020

Erdal, M. KOÇYİĞİT, A. And Yıldırım, M. (2020) . "The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage." Microelectronics Reliability , vol.106.

@article{article, author={M.O. Erdal Et Al. }, title={The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage}, journal={Microelectronics Reliability}, year=2020}