Yıldırım, M. Et Al. 2019. The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions. Physica B: Condensed Matter , vol.572 , 153-160.

Yıldırım, M., Erdal, M., & KOÇYİĞİT, A., (2019). The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions. Physica B: Condensed Matter , vol.572, 153-160.

Yıldırım, M., M.O. Erdal, And ADEM KOÇYİĞİT. "The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions," Physica B: Condensed Matter , vol.572, 153-160, 2019

Yıldırım, M. Et Al. "The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions." Physica B: Condensed Matter , vol.572, pp.153-160, 2019

Yıldırım, M. Erdal, M. And KOÇYİĞİT, A. (2019) . "The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions." Physica B: Condensed Matter , vol.572, pp.153-160.

@article{article, author={M. Yıldırım Et Al. }, title={The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions}, journal={Physica B: Condensed Matter}, year=2019, pages={153-160} }