ERDOĞAN, E. Et Al. 2018. Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect. AIP CONFERENCE PROCEEDINGS , vol.1935, no.150001 .

ERDOĞAN, E., kundakçı, m., KASAPOĞLU, A. E., & GÜR, E., (2018). Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect. AIP CONFERENCE PROCEEDINGS , vol.1935, no.150001.

ERDOĞAN, ERMAN Et Al. "Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect," AIP CONFERENCE PROCEEDINGS , vol.1935, no.150001, 2018

ERDOĞAN, ERMAN Et Al. "Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect." AIP CONFERENCE PROCEEDINGS , vol.1935, no.150001, 2018

ERDOĞAN, E. Et Al. (2018) . "Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect." AIP CONFERENCE PROCEEDINGS , vol.1935, no.150001.

@article{article, author={ERMAN ERDOĞAN Et Al. }, title={Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect}, journal={AIP CONFERENCE PROCEEDINGS}, year=2018}