KOÇYİĞİT, A. Et Al. 2017. Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique. Journal of Materials Science: Materials in Electronics , vol.28, no.8 , 5880-5886.

KOÇYİĞİT, A., Orak, I., AYDOĞAN, Ş., Çaldıran, Z., & Turut, A., (2017). Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique. Journal of Materials Science: Materials in Electronics , vol.28, no.8, 5880-5886.

KOÇYİĞİT, ADEM Et Al. "Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique," Journal of Materials Science: Materials in Electronics , vol.28, no.8, 5880-5886, 2017

KOÇYİĞİT, ADEM Et Al. "Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique." Journal of Materials Science: Materials in Electronics , vol.28, no.8, pp.5880-5886, 2017

KOÇYİĞİT, A. Et Al. (2017) . "Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique." Journal of Materials Science: Materials in Electronics , vol.28, no.8, pp.5880-5886.

@article{article, author={ADEM KOÇYİĞİT Et Al. }, title={Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique}, journal={Journal of Materials Science: Materials in Electronics}, year=2017, pages={5880-5886} }