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Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode
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E. ERDOĞAN And M. KUNDAKÇİ, "Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode," Physica B: Condensed Matter , vol.506, pp.105-108, 2017

ERDOĞAN, E. And KUNDAKÇİ, M. 2017. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode. Physica B: Condensed Matter , vol.506 , 105-108.

ERDOĞAN, E., & KUNDAKÇİ, M., (2017). Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode. Physica B: Condensed Matter , vol.506, 105-108.

ERDOĞAN, ERMAN, And Mutlu KUNDAKÇİ. "Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode," Physica B: Condensed Matter , vol.506, 105-108, 2017

ERDOĞAN, ERMAN And KUNDAKÇİ, Mutlu. "Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode." Physica B: Condensed Matter , vol.506, pp.105-108, 2017

ERDOĞAN, E. And KUNDAKÇİ, M. (2017) . "Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode." Physica B: Condensed Matter , vol.506, pp.105-108.

@article{article, author={ERMAN ERDOĞAN And author={Mutlu KUNDAKÇİ}, title={Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode}, journal={Physica B: Condensed Matter}, year=2017, pages={105-108} }