Optical band gap engineering of (MgO)x(ZnO)1-x films deposited by sol-gel spin coating

TEMEL S., Nebi M., PEKER D.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.12, sa.1-2, ss.76-79, 2018 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 12 Sayı: 1-2
  • Basım Tarihi: 2018
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.76-79
  • Anahtar Kelimeler: Band gap engineering, MgZnO thin films, Semiconductors, Sol-gel preparation
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

© 2018, National Institute of Optoelectronics. All rights reserved.The effects of magnesium oxide (MgO) doping on the characteristics of zinc oxide (ZnO) films have been investigated in this study. (MgO)x(ZnO)1-x thin films were deposited by sol -gel spin coating technique with different MgO concentrations. The structural, surface, optical and electrical properties of the films were characterized and the effects of doping on these properties were investigated. It was observed that the band gap of the (MgO)x(ZnO)1 -x films can be adjusted by increasing the x values from 0 to 1. In addition structural, surface and electrical properties of the films were determined to vary according to the dopant concentration.