Optical band gap engineering of (MgO)x(ZnO)1-x films deposited by sol-gel spin coating


TEMEL S., Nebi M., PEKER D.

Optoelectronics and Advanced Materials, Rapid Communications, vol.12, no.1-2, pp.76-79, 2018 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 12 Issue: 1-2
  • Publication Date: 2018
  • Journal Name: Optoelectronics and Advanced Materials, Rapid Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.76-79
  • Keywords: Band gap engineering, MgZnO thin films, Semiconductors, Sol-gel preparation
  • Bilecik Şeyh Edebali University Affiliated: Yes

Abstract

© 2018, National Institute of Optoelectronics. All rights reserved.The effects of magnesium oxide (MgO) doping on the characteristics of zinc oxide (ZnO) films have been investigated in this study. (MgO)x(ZnO)1-x thin films were deposited by sol -gel spin coating technique with different MgO concentrations. The structural, surface, optical and electrical properties of the films were characterized and the effects of doping on these properties were investigated. It was observed that the band gap of the (MgO)x(ZnO)1 -x films can be adjusted by increasing the x values from 0 to 1. In addition structural, surface and electrical properties of the films were determined to vary according to the dopant concentration.