Photodiode behaviors of the AgSbS2nanocrystals in a Schottky structure

Ko yiǧit A., Erdal M. O., Ozel F., Yildirim M.

Nanotechnology, cilt.32, sa.38, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 32 Sayı: 38
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1088/1361-6528/ac0b64
  • Dergi Adı: Nanotechnology
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Biotechnology Research Abstracts, Communication Abstracts, Compendex, EMBASE, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: AgSbS2, photodiode, Schottky structure, ternary chalcogenides
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Hayır

Özet

© 2021 IOP Publishing Ltd.Cubic phase AgSbS2nanocrystals (NCs) were synthesized by the hot-injection method, and they were inserted between the Al andp-Si to fabricate Al/AgSbS2/p-Si photodiode by the thermal evaporation method. AgSbS2NCs were characterized by XRD, SEM and TEM instruments to confirm the crystal phase, surface morphology as well as crystalline size. The XRD pattern revealed that the cubic crystalline structure of the AgSbS2. The spherical shapes and well surface morphology were affirmed by SEM and TEM analysis. Al/AgSbS2/p-Si photodiode was characterized byI-Vmeasurements depending on the light power intensity and byC-Vmeasurement for various frequencies.I-Vcharacteristics revealed that the Al/AgSbS2/p-Si exhibited good photodiode behavior and a high rectifying ratio. Various diode and detector parameters were extracted fromI-Vmeasurements, and they were discussed in detail. TheC-Vcharacteristics highlighted that the Al/AgSbS2/p-Si photodiode showed voltage and frequency dependent profile at the accumulation region. The fabricated Al/AgSbS2/p-Si photodiode can be thought for optoelectronic applications.