Akademik Veri Yönetim Sistemi
4th INTERNATIONAL ENERGY ENGINEERING CONGRESS, Gaziantep, Türkiye, 24 - 25 Ekim 2019, cilt.1, ss.577-587, (Tam Metin Bildiri)
The Al/n-Si metal semiconductor heterojunction with coronene (CRN) interfacial layer was fabricated by physical vapor deposition (PVD) technique and characterized by C-V measurements depending on various frequency measurements from 10 kHz to 1 MHz at room temperature. Furthermore, the photocapacitance measurements were performed on the device under various illumination intensities from 20 mW to 100 mW by 20 mW steps. While the capacitance values decreased with increasing frequency, the conductance values increased. Thus, the C-V and G-V characteristics of the Al/CRN/n-Si device showed that the capacitance and conductance values are strong function of the frequency and voltage. In addition, various electrical parameters of the Al/CRN/n-Si device were extracted from C-2–V plots and discussed in the details. The device exhibited excellent photocapacitance behavior under light illumination. The Al/CRN/n-Si device can be employed photocapacitance applications.