Ag/Fe3O4@BG/Si Schottky type photodiodes for wide-range wavelengths


KOÇYİĞİT A., Unal F., Yıldız D. E., Yıldırım M.

Sensors and Actuators A: Physical, cilt.393, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 393
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.sna.2025.116807
  • Dergi Adı: Sensors and Actuators A: Physical
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Core-shell structures, Fe3O4 nanoparticles, Interfacial layer, Metal semiconductor devices, Optoelectronic applications, Zn doped bioactive glass
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

The photodetectors can be used to detect light power intensity of sunlight or various wavelengths of the electromagnetic spectrum (UV to NIR). They are important parts of the various applications such as telecommunications, measurement and sensors systems. In this study, we synthesized Fe3O4 nanoparticles coated with 3 wt% and 5 wt% amount Zn doped bioactive glasses (BG) using a modified Stöber method to form core-shell structures. The core-shell nanoparticles were systematically characterized through X-ray diffraction, transmission electron microscopy, and field emission gun-scanning electron microscopy analyses. The synthesized Fe3O4@BG layers were employed as interfacial layers to fabricate Ag/Fe3O4@BG/Si heterostructure devices on n-Si and p-Si wafers. Current-voltage (I-V) and current-transient (I-t) measurements were performed on the devices by various light power densities and wavelengths. The various device parameters such as barrier height, ideality factor, series resistance were determined by different approximations and discussed in detail depending on light power density. In addition, various photodetector parameters such as responsivity, specific detectivity etc. were discussed in detail for various devices in the case of light power density and wide-range wavelengths values. The results highlight that the fabricated Fe3O4@BG/Si devices are promising candidates for optoelectronic applications, particularly in the detection of light over a wide range of wavelengths.