Akademik Veri Yönetim Sistemi
4th INTERNATIONAL ENERGY ENGINEERING CONGRESS, Gaziantep, Türkiye, 24 - 25 Ekim 2019, cilt.1, ss.588-596, (Tam Metin Bildiri)
In this study, Cu doped (10%) TiO2 thin film was deposited on the n-Si by spin coating technique to use the film as interfacial layer for metal semiconductor heterojunction. Thus, Al/Cu:TiO2/n-Si device was fabricated and its dielectric properties was investigated by impedance spectroscopy technique for wide range temperature from 80 K to 400 K by 40 K intervals and ±5 voltages. Temperature dependent dielectric constant (𝜀′), dielectric loss (𝜀′′), loss tangent (tan δ), the real and imaginary parts of electric modulus (𝑀′and 𝑀′′) and ac electrical conductivity (𝜎) were extracted from the C-V measurements and discussed in the details for a wide range temperatures. The results highlighted that all dielectric parameters was not so changed from the measurement temperatures, and the device can be employed for a wide range temperatures.