Investigation photoelectric characteristics of ZnO/p-Si heterojunction structure modification with PCBM


Yıldırım M., KOÇYİĞİT A.

Applied Physics A: Materials Science and Processing, cilt.128, sa.8, 2022 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 128 Sayı: 8
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s00339-022-05842-0
  • Dergi Adı: Applied Physics A: Materials Science and Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex
  • Anahtar Kelimeler: Al/ZnO:PCBM/p-Si devices, C-V characterization, Heterojunction structures, Photosensing
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

© 2022, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.[6,6]-Phenyl C61-butyric acid methyl ester (PCBM) is a good electron transport material and can be employed in optoelectronic application. To understand the effect of the amount ratio on the capacitive behaviors, the pristine ZnO, 3%, 5% and 10% amounts PCBM (low amount) added ZnO interfacial layered Al/ZnO:PCBM/p-Si heterojunction structures have been fabricated by sol–gel spin-coating method and characterized by X-ray diffraction (XRD), capacitance–voltage (C-V) and conductance-voltage (G-V) measurements for the frequency range between 10 kHz and 1 MHz. Some electrical parameters of the pristine ZnO and various PCBM added ZnO interlayered devices have been calculated from 1/C2-V (1/capacitance2-voltage) plots for various frequencies. Moreover, capacitance transient (C-t) and conductance-transient (G-t) measurements of the Al/ZnO:PCBM/p-Si devices have been performed for various light illumination intensities from 20 to 100 mW/cm2 with 20 mW/cm2 increments under light illumination which has whole spectral matching. The results revealed that PCBM amount has a great effect on capacitance and conductivity values of the Al/ZnO:PCBM/p-Si devices.