Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions

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Baydoğan N., Köse Y., Baydoğan M., Çimenoğlu H.

DEFECT AND DIFFUSION FORUM, vol.8, no.334-335, pp.349-352, 2013 (Scopus)

• Publication Type: Article / Article
• Volume: 8 Issue: 334-335
• Publication Date: 2013
• Doi Number: 10.4028/www.scientific.net/ddf.334-335.349
• Journal Name: DEFECT AND DIFFUSION FORUM
• Journal Indexes: Scopus
• Page Numbers: pp.349-352
• Bilecik Şeyh Edebali University Affiliated: No

Abstract

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.