A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

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KOÇYİĞİT A., Sarılmaz A., Öztürk T., Ozel F., Yıldırım M.

Beilstein Journal of Nanotechnology, cilt.12, ss.984-994, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 12
  • Basım Tarihi: 2021
  • Doi Numarası: 10.3762/bjnano.12.74
  • Dergi Adı: Beilstein Journal of Nanotechnology
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, Directory of Open Access Journals
  • Sayfa Sayıları: ss.984-994
  • Anahtar Kelimeler: Au/CuNiCoS4/p-Si device, CuNiCoS4, optoelectronic applications
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Hayır

Özet

© 2021 Koçyiğit et al.; licensee Beilstein-Institut. License and terms: see end of documentIn this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications