A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

Creative Commons License

KOÇYİĞİT A., Sarılmaz A., Öztürk T., Ozel F., Yıldırım M.

Beilstein Journal of Nanotechnology, vol.12, pp.984-994, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 12
  • Publication Date: 2021
  • Doi Number: 10.3762/bjnano.12.74
  • Journal Name: Beilstein Journal of Nanotechnology
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, Directory of Open Access Journals
  • Page Numbers: pp.984-994
  • Keywords: Au/CuNiCoS4/p-Si device, CuNiCoS4, optoelectronic applications
  • Bilecik Şeyh Edebali University Affiliated: No

Abstract

© 2021 Koçyiğit et al.; licensee Beilstein-Institut. License and terms: see end of documentIn this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications