A facile method for fabrication of large area graphene nanostructures

KURU C., Jin S.

Fullerenes Nanotubes and Carbon Nanostructures, cilt.25, sa.11, ss.642-645, 2017 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 25 Sayı: 11
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1080/1536383x.2017.1373097
  • Dergi Adı: Fullerenes Nanotubes and Carbon Nanostructures
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.642-645
  • Anahtar Kelimeler: band gap, dewetting, field effect transistor, Nanostructured graphene, nickel
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

© 2017 Taylor & Francis Group, LLC.In this study, we introduce a novel method to produce large area interconnected graphene nanostructures. A single layer CVD (Chemical Vapor Deposition) grown graphene was nanostructured by employing dewetted Ni thin film as an etching mask for the underlying graphene. As a result, a network of graphene nanostructures with irregular shapes and widths down to 10 nm is obtained. The FET (field effect transistor) devices fabricated employing the nanostructured graphene as channel material exhibit increased on/off current ratio compared to pristine graphene indicating a slight band gap opening due to the quantum confinement effect in such narrow graphene nanostructures. This technique can be useful for the large scale fabrication of graphene based electronic devices such as FETs and sensors.