Production and Characterization of Electrodeposited Cadmium Sulfide Semiconductor Films with Different Boron Content

ERDOĞAN E.

Crystal Research and Technology, cilt.59, sa.6, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 59 Sayı: 6
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1002/crat.202300353
  • Dergi Adı: Crystal Research and Technology
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: boron-doped Cds, electrodeposition, optical properties, semiconductor films, structural properties
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

In this study, Cadmium Sulfide (CdS) semiconductor films are electrodeposited on Indium Tin Oxide (ITO) substrates at 80 °C base temperature for different boric acid (H3BO3) ratios. The effect of boric acid on these films is investigated. For this, first of all, the structural change of the films is examined. Among the films obtained with different boric acid ratios, the optimum film is achieved with 0.06 m boric acid doped. From the basic absorption spectra (αhʋ) of the obtained CdS:B films, the variation of hʋ is drawn and it is determined that the CdS:B semiconductor films has a direct band transition. From the basic absorption spectra of the obtained CdS:B films, it is observed that the CdS:B semiconductor films has a direct band transition. In addition, the optical energy bandgap values obtained are in agreement with the values in the available literatures. The results of the structural, optical, and morphological properties of the films produced in this study indicate that among the selected additive ratios, 1% boric acid gives the best and optimum deposition condition. The thin films obtained are also found to be useful as absorber layers in photovoltaic solar cells.