Synthesize and characterization of Co-complex as interlayer for Schottky type photodiode

KOÇYİĞİT A., Yıldırım M., Kose D., Yıldız D.

Polymer Bulletin, cilt.79, sa.12, ss.11389-11408, 2022 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 79 Sayı: 12
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s00289-021-04021-0
  • Dergi Adı: Polymer Bulletin
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Chemical Abstracts Core, Chimica, Compendex, INSPEC
  • Sayfa Sayıları: ss.11389-11408
  • Anahtar Kelimeler: Al/p-Si, Metal semiconductor devices, Nicotinamide/nicotinic acid complexes, Optoelectronic applications
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

© 2021, The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.Nicotinamide/nicotinic acid complexes with centered Co metal (called Co-complexes) were synthesized by chemically reactions and characterized by thermogravimetric analysis (TGA), UV–Vis spectrometer and atomic force microscopy (AFM) techniques. While the composition of the Co-complexes was confirmed by TGA, the compatibilities of the Co-complexes for optoelectronic devices were revealed by UV–Vis spectrometer and AFM techniques. The Co-complexes were dissolved in water for various weight amounts of 0.5 mg, 1.0 mg, 2.0 mg and 3.0 mg, and solutions were coated onto Si wafer pieces to obtain Co-complex interlayered film in the Al/p-Si metal semiconductor devices. I–V and I–t measurements were performed to investigate photodiode and photodetector behaviors of the Al/Co-complex/p-Si devices for various light power illumination intensities. The result revealed that Al/Co-complex/p-Si devices can be used for optoelectronic applications.