Nanopatterned graphene field effect transistor fabricated using block co-polymer lithography


Choi D., KURU C., Choi C., Noh K., Hong S., Das S., ...Daha Fazla

Materials Research Letters, cilt.2, sa.3, ss.131-139, 2014 (Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 2 Sayı: 3
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1080/21663831.2013.876676
  • Dergi Adı: Materials Research Letters
  • Derginin Tarandığı İndeksler: Scopus
  • Sayfa Sayıları: ss.131-139
  • Anahtar Kelimeler: Block copolymer lithography, Field effect transistor, Graphene, Graphene nanopatterning, Multilayer graphene
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

We demonstrate a successful fabrication of Nanopatterned Graphene (NPG) using a PS-b-P4VP polymer, which was never used previously for the graphene patterning. The NPG exhibits homogeneous mesh structures with an average neck width of 19 nm. Electronic characterization of single and few layers NPG FETs (field effect transistors) were performed at room temperature. We found that the sub-20 nm neck width creates a quantum confinement in NPG, which has led to a bandgap opening of 0.08 eV. This work also demonstrates that BCP (block co-polymer) lithography is a pathway for low-cost, high throughput large-scale production of NPG with critical dimensions down to the nanometer regime. © 2014 The Author(s). Published by Taylor & Francis.