Akademik Veri Yönetim Sistemi
Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi, cilt.7, sa.2, ss.1013-1022, 2018 (Hakemli Dergi)
In this research work, InGaN (Indium Gallium Nitride) triple compound was grown under different N2 gasflow rates by using sputtering technique. The structural, optical and morphological characteristics of the InGaNcompound have been studied in detail. In the XRD analysis, films exhibited hexagonal crystal structure. Thefilms appear at lower wavelengths in visible region and absorption values begin to increase sharply from about550-560 nm and reach the highest absorption value in the Near-UV region. When gas flow rates increased, theoptical band gaps of the film increased. In SEM, the film exhibits dense coverage of the material on the surfaceof the substrate without the presence of voids, pinholes or cracks. In the results of the AFM, there are locallypeaks and valleys, and partially homogeneous and circular-like clusters are arranged. Films are suitablestructures for use in device applications.