The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

Orak I., Ejderha K., SÖNMEZ E., ALANYALIOĞLU M., Turut A.

Materials Research Bulletin, cilt.61, ss.463-468, 2015 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 61
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.materresbull.2014.10.066
  • Dergi Adı: Materials Research Bulletin
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.463-468
  • Anahtar Kelimeler: DC magnetron sputtering, Effect of thermal annealing, GaP, Ideality factor, Schottky diode, Surface morphology
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Hayır

Özet

The Co/n-GaP nano-Schottky diodes have been fabricated to investigate effect of annealing temperature on the characteristics of the device. DC Magnetron sputtering technique has been used for Co metallic contact. The samples have been annealed for three minutes at 400 °C and 600 °C. XRD analyzes of the devices subjected to thermal annealing process have been investigated. Surface images have been taken with atomic force microscopy (AFM) in order to examine the morphology of the surface of the metal layer before and after the annealing the sample. The current-voltage (I-V) measurements taken at room temperature have shown that the ideality factor and series resistance decrease with the increasing annealing temperature. The ideality factor was found to be 1.02 for sample annealed at 400 °C. Before and after annealing, depending on the temperature measurement, the capacitance-frequency (C-f), and conductance-frequency (G-f) have been measured, and graphs have been plotted.