Modification of barrier diode with cationic dye for high power applications

ERDOĞAN E., YILMAZ M., AYDOĞAN Ş., İNCEKARA Ü., Kacus H.

Optik, cilt.232, 2021 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 232
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.ijleo.2021.166598
  • Dergi Adı: Optik
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, INSPEC
  • Anahtar Kelimeler: Barrier height, Electrical characteristics, Ideality factor, Interface states density, Methylene blue, Organic component, Schottky diode
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

© 2021 Elsevier GmbHCurrent-voltage (I-V) measurements of Au/methylene blue (MB)/p-Si/Al diode were taken at room temperature, in the dark and under illumination and also in a wide temperature range (100−360 K). Schottky diode showed non-ideal current-voltage behavior at 360 K and 100 K with ideality factors (n) equal to 1.81−1.46 and 3.52−2.73, respectively, using TE and Cheung methods. Experimental barrier height (ϕb) values of the diode were determined as 0.29 eV for TE, 0.33 eV for Cheung and 0.38 eV for Norde at 100 K, and 0.79, 0.81, and 0.87 eV at 360 K, respectively. Series resistance (Rs) was found with the help of Cheung functions and Norde functions. The results show that the produced diode can be used in a variety of optoelectronic applications.