BODIPY and Aza-BODIPY based Schottky-type photodiodes for optoelectronic applications


SEVİNÇ G., Orak I., KOÇYİĞİT A.

Inorganic Chemistry Communications, vol.184, 2026 (SCI-Expanded, Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 184
  • Publication Date: 2026
  • Doi Number: 10.1016/j.inoche.2025.115975
  • Journal Name: Inorganic Chemistry Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, DIALNET
  • Keywords: Aza-BODIPY, BODIPY, Photodiode, Responsivity, Schottky
  • Bilecik Şeyh Edebali University Affiliated: Yes

Abstract

The borondipyrromethene (BODIPY) and aza‑borondipyrromethene (Aza-BODIPY) classes of dye compounds were synthesized successfully, and their chemical characterizations were conducted by 1H, 13C NMR spectroscopy, and high-resolution mass spectrometry (HRMS). The photophysical characteristics of these chromophores were clarified using Density Functional Theory (DFT) calculations and electron-hole analysis, after being ascertained through UV–Vis and fluorescence spectroscopy in solution. The compounds demonstrated notable absorption and emission characteristics in the visible and near-infrared regions, which can be attributed to the localized π-π∗ and n-π∗ transitions. The absorption spectra were employed to determine the HOMO-LUMO (Highest Occupied Molecular Orbital-Lowest Unoccupied Molecular Orbital) transitions, with excitons mainly within the core structures, causing a red shift in absorption wavelengths. The dyes (BODIPY called BDP and Aza-BODIPY called AzaBDP) were employed to be interfacial film layer to investigate photodiode behavior in between Au and p-Si substrate by spin coating technique. The fabricated Au/BDP/p-Si and Au/AzaBDP/p-Si heterostructures were characterized by current voltage (I–V) measurements for various light densities and C–V measurements for wide range frequency. The Au/BDP/p-Si and Au/AzaBDP/p-Si heterostructures exhibited good photodiode behaviors by increasing current levels almost 103 fold, and rectification ratio values obtained 103 and 105 levels, repctively. While the responsivity values of Au/BDP/p-Si and Au/AzaBDP/p-Si heterostructures were calculated to be 39.66 mA/W and 61.66 mA/W, the specific detectivity values were obtained as 8.83 × 1010 Jones and 5.41 × 1011 Jones, respectively. The C–V characteristics were used to calculate various electrical parameters such as interface states levels, and results were discussed in detail. The fabricated heterostructures can be thought for dye derivative based photodiodes.