Akademik Veri Yönetim Sistemi
Applied Physics A: Materials Science and Processing, cilt.126, sa.10, 2020 (SCI-Expanded)
© 2020, Springer-Verlag GmbH Germany, part of Springer Nature.We reported the optoelectronic performance of organic/inorganic hybrid junction photodiode based on Eosin y/silicon (Si). For this purpose, we fabricated Eosin y/n-Si and Eosin y/p-Si structures and demonstrated that both devices exhibited strong photodiode characteristics to the increasing light power depending on current–voltage (I–V) measurements. Furthermore, the XRD and SEM analyses of Eosin y film were performed to analyze structural and topographical features of the film. The electrical measurements of Eosin y/n-Si and Eosin y/p-Si photodiodes were carried out in both dark and under various illumination intensities in the range of 100–400 mW/cm2. The main device parameters, such as ideality factor, barrier height, and responsivities of both devices, were determined from the I–V characteristics. The obtained photocurrent values in reverse biases are higher than the dark current at the same reverse bias for both Eosin y/n-Si and Eosin y/p-Si photodiodes. So, this confirmed that light produces photocurrent due to the formation of electron–hole pairs as a result of light absorption in the Eosin y film. Moreover, the C–V measurements were performed on both photodiodes to characterize capacitive performance of the Eosin y films. The fabricated photodiodes based on Eosin y thin films present great promise for future optoelectronic device applications.