Investigation of AlN-based Schottky type photodetector in visible light detection

KOÇYİĞİT A., Yıldız D., Erdal M., TATAROĞLU A., Yıldırım M.

Physica B: Condensed Matter, cilt.690, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 690
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1016/j.physb.2024.416286
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: AlN, Interfacial layer, Responsivity, Schottky photodetector
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

In this study, we fabricated an AlN-based Schottky photodetector by thermal evaporation technique using commercial AlN/n-Si heterojunction which was fabricated by hydride vapor phase epitaxy. Thus, Au/Ti/AlN/n-Si heterostructure was obtained and tested for photodetector applications for various light power densities from 20 mW/cm2 to 100 mW/cm2 by I–V characteristics. Various parameters of heterostructure were extracted by thermionic emission theory, Norde and Cheung methods to clear the electrical properties of the Au/Ti/AlN/n-Si. Photodetection parameters such as responsivity, photosensitivity, and specific detectivity values were also studied depending on the changing light power density. The Au/Ti/AlN/n-Si photodetector revealed 1.36 A/W responsivity and 7.99 × 109 Jones specific detectivity values. The photoresponse time was investigated by light on-off transient measurements. The Au/Ti/AlN/n-Si photodetector exhibited fast and linear photoresponse to the illumination. The photocapacitance and photoconductance properties of the Au/Ti/AlN/n-Si photodetector were also studied. The results highlighted that Au/Ti/AlN/n-Si photodetector can be a good candidate for fast-response photodetection applications.