The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization

KOÇYİĞİT A., Yıldırım M., Sarılmaz A., Ozel F.

Journal of Alloys and Compounds, cilt.780, ss.186-192, 2019 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 780
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.jallcom.2018.11.372
  • Dergi Adı: Journal of Alloys and Compounds
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.186-192
  • Anahtar Kelimeler: Au/Cu2WSe4/p-Si photodiode, Copper tungsten selenide, Cu2WSe4, Photodetector, Schottky devices
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Hayır

Özet

© 2018 Elsevier B.V.Cu2WSe4 nanosheets were synthesized by the hot-injection method and put as interfacial layers between Au metal and p-Si by spin coating technique to investigate their photoresponse and capacitor properties via I-V and C-V measurements, respectively. The XRD were operated to confirm crystalline structure of the Cu2WSe4. The TEM image revealed that the crystalline nanosheet structures of the Cu2WSe4. The I-V measurements were performed under dark and light illumination in the range 20 mW–100 mW light intensities with 20 mW interval. In addition, some diode parameters such as ideality factor, barrier height and series resistance were extracted via a various method and discussed in the details. The C-V measurements were employed for various frequency and voltages. The C-V characteristics of the device confirmed the strong dependence on the frequency and voltage. The results imparted that Au/Cu2WSe4/p-Si can be employed for photodiode, photodetector and capacitor applications.