Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency

Yildiz D. E., KOÇYİĞİT A., Erdal M. O., Yildirim M.

Bulletin of Materials Science, vol.44, no.1, 2021 (SCI-Expanded, Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 44 Issue: 1
  • Publication Date: 2021
  • Doi Number: 10.1007/s12034-020-02297-y
  • Journal Name: Bulletin of Materials Science
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Al/PCBM:ZnO/p-Si structure, dielectric constant, electric modulus, PCBM, ZnO
  • Bilecik Şeyh Edebali University Affiliated: Yes

Abstract

© 2021, Indian Academy of Sciences.The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the PCBM:ZnO were investigated using atomic force microscopy. The results highlighted that PCBM:ZnO thin film has uniform surfaces. The dielectric parameters such as real and imaginary parts of the electric modulus (M′ and M″) and ac electrical conductivity (σ), dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ) values were determined. The results of the dielectric properties of the Al/PCBM:ZnO/p-Si structures impressed voltage and frequency changing. The Al/PCBM:ZnO/p-Si structures can be regarded as a candidate for organic diode applications.