Akademik Veri Yönetim Sistemi
Journal of Materials Science, cilt.40, sa.3, ss.677-682, 2005 (SCI-Expanded)
The grain growth kinetics in the 1, 2, 3 and 4 wt.% CuO doped ZnO was studied using the simplified phenomenological grain growth kinetics equation G n - G 0 n = K 0·t· exp (- Q/RT) together with microstructure properties of the sintered samples. The grain growth exponent value (n) was found to be 3 for 1, 2 and 3 wt.% CuO doped ZnO and 5.5 for 4 wt.% CuO doped ZnO. The apparent activation energy was decreased with CuO doping up to 3 wt.% from 250 kJ/mol to 150 kJ/mol but it was not changed significantly (155 kJ/mol) by 4 wt.% CuO doping. CuO doping up to 3 wt.% promoted the grain growth of ZnO whereas 4 wt.% CuO doping inhibited the grain growth of ZnO because of formation of Cu-rich secondary phase in the grain boundaries. © 2005 Springer Science + Business Media, Inc.