The structural analysis of MWCNT-SiO2 and electrical properties on device application

KOÇYİĞİT A., Orak I., Karteri İ., Uruş S.

Current Applied Physics, cilt.17, sa.9, ss.1215-1222, 2017 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 17 Sayı: 9
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.cap.2017.05.006
  • Dergi Adı: Current Applied Physics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1215-1222
  • Anahtar Kelimeler: C-V measurements, Carbon nanotube, I-V measurements, Photodiode, Schottky device
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Hayır

Özet

© 2017 Elsevier B.V.Al/MWCNT-SiO2/p-Si device were obtained using chemical techniques and characterized using the I-V (under dark and light conditions) and C-V measurements depending on various frequency. MWCNT-SiO2 composite layer of the device were also characterized using XRD, FTIR, SEM, TEM and TGA measurements. These all results indicated that the MWCNT-SiO2 layer synthesized successfully on Si wafer as a composite form with chemical processes and spin coating. I-V measurements showed that device has good rectifying properties, small saturation current and good photodiode properties. Solar cell conversion efficiency (ηp) and fill factor (FF) values of the device also were calculated as 0.12% and 47.6%, respectively. It could be seen from C-V measurements that capacitance and conductance properties of the device strongly depended on frequency and voltage. It may be used and improved this device as rectifier, photodiode and capacitor in the future.