Graphene oxide as a p-dopant and an anti-reflection coating layer, in graphene/silicon solar cells

Yavuz S., KURU C., Choi D., Kargar A., Jin S., Bandaru P.

Nanoscale, cilt.8, sa.12, ss.6473-6478, 2016 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8 Sayı: 12
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1039/c5nr09143h
  • Dergi Adı: Nanoscale
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.6473-6478
  • Bilecik Şeyh Edebali Üniversitesi Adresli: Evet

Özet

It is shown that coating graphene-silicon (Gr/Si) Schottky junction based solar cells with graphene oxide (GO) improves the power conversion efficiency (PCE) of the cells, while demonstrating unprecedented device stability. The PCE has been shown to be increased to 10.6% (at incident radiation of 100 mW cm-2) for the Gr/Si solar cell with an optimal GO coating thickness compared to 3.6% for a bare/uncoated Gr/Si solar cell. The p-doping of graphene by the GO, which also serves as an antireflection coating (ARC) has been shown to be a main contributing factor to the enhanced PCE. A simple spin coating process has been used to apply GO with thickness commensurate with an anti-refection coating (ARC) and indicates the suitability of the developed methodology for large-scale solar cell assembly.