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5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2018), Nevşehir, Turkey, 4 - 06 October 2018, pp.10-16, (Full Text)
The metal semiconductor heterojunction devices have gained great interest last three decades because of their important applications such as diode and solar cells in the industry. In this study, 1% In doped ZnO thin film was obtained by spin coating technique and inserted as interfacial thin film layer between Al and p-Si for investigating dielectric properties of the Al/In:ZnO/p-Si device. Impedance spectroscopy technique depending on frequency (from 10 kHz to 1 MHz) and voltage (from -5V to +5V) were employed to characterize the electrical and dielectric characterization of the device. While interface states (𝑁𝑠𝑠) are more efficient at low frequencies, series resistance (𝑅𝑠) values are more efficient higher frequencies according to results. Doping concentration of the acceptor atoms (Na), and barrier height (𝛷𝒃) values decreased with increasing frequency. The dielectric parameters such as dielectric constant (𝜀′), dielectric loss (𝜀′′), loss tangent (tan δ), the real and imaginary parts of electric modulus (𝑀′and 𝑀′′) and ac electrical conductivity (𝜎) were taken from impedance spectroscopy measurements and discussed in the details. The results imparted that all dielectric parameters are strong function of the frequency and voltage. The Al/In:ZnO/p-Si device may be employed and improved for the industrial applications.