The Dielectric Characterization of the SiO2-MWCNT between the metal and semiconductor

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Orak I., Koçyiğit A.

International Conference on Innovative Engineering Applications, Sivas, Turkey, 20 - 22 September 2018, pp.341-346, (Full Text)

  • Publication Type: Conference Paper / Full Text
  • City: Sivas
  • Country: Turkey
  • Page Numbers: pp.341-346
  • Open Archive Collection: AVESIS Open Access Collection
  • Bilecik Şeyh Edebali University Affiliated: No

Abstract

MWCNT-SiO2 composite structure were synthesized chemically and inserted between Al and p-Si by spin coating technique. So, Al/MWCNT-SiO2/p-Si device was fabricated by thermal evaporation technique and characterized by impedance spectroscopy technique depending on frequency (from10 kHz to 1 MHz) and voltage. The dielectric parameters such as dielectric constant (ε'), dielectric loss (ε''), loss tangent (tan δ), the real and imaginary parts of electric modulus (M' and M'') and ac electrical conductivity (σ) were extracted impedance spectroscopy measurements and discussed in the details. The results imparted that all dielectric parameters are strong function of the frequency and voltage. The MWCNT-SiO2 composite structure can be thought as dielectric materials in the industrial applications.