Research Information System
International Congress on Semiconductor Materials and Devices, Ardahan, Turkey, 28 - 30 August 2018, pp.24-31, (Full Text)
10% Cu doped TiO2 thin films were fabricated by spin coating method, and then it was employed as interfacial layer between Al and n-Si for investigating dielectric behaviors of Al/Cu:TiO2/n-Si heterojunction device. Impedance spectroscopy technique depending on frequency (from10 kHz to 1 MHz) and voltage (from -5V to +5V) were utilized to characterize the dielectric behaviors of the heterojunction. The dielectric parameters such as dielectric constant (ε'), dielectric loss (ε''), loss tangent (tan δ), the real and imaginary parts of electric modulus (M' and M'') and ac electrical conductivity (σ) were obtained from impedance spectroscopy measurements and discussed in the details. The results highlighted that most of dielectric parameters are strong function of the frequency and voltage except real and imaginary electric modulus. The Al/Cu:TiO2/n-Si heterojunction can be thought as device in the industrial applications